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| Preliminary Data SIPMOS Small-Signal-Transistor Features * Single N channel * BSO 302SN Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 9.8 V A Enhancement mode RDS(on) 0.013 * Avalanche rated * Logic Level * dv/dt rated Type BSO 302SN Parameter Continuous drain current Package SO 8 Symbol Ordering Code Q67041-S4029 Value 9.8 39.2 250 9.8 0.2 6 mJ A mJ kV/s Unit A Maximum Ratings, at T j = 25 C, unless otherwise specified ID IDpulse EAS IAR EAR dv/dt T C = 25 C Pulsed drain current T C = 25 C Avalanche energy, single pulse I D = 9.8 A, V DD = 25 V, R GS = 25 Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 9.8 A, V DS = 24 V, di/dt = 200 A/s, T jmax = 150 C Gate source voltage Power dissipation VGS Ptot Tj Tstg 20 2 -55 ... +150 -55 ... +150 55/150/56 V W C T C = 25 C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 BSO 302SN Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec., 6 cm2 cooling area 1) Symbol min. Values typ. max. 25 75 62.5 K/W Unit RthJS Rth(JA) Rth(JA) - Electrical Characteristics, at T j = 25 C, unless otherwise specified Symbol Values Parameter min. Static Characteristics Drain- source breakdown voltage typ. 1.6 max. 2 Unit V(BR)DSS VGS(th) IDSS 30 1.2 V VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 80 A Zero gate voltage drain current A 0.1 10 1 100 100 nA 0.012 0.008 0.017 0.013 VDS = 30 V, V GS = 0 V, T j = 25 C VDS = 30 V, V GS = 0 V, T j = 150 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 8.6 A VGS = 10 V, I D = 9.8 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSO 302SN Electrical Characteristics Parameter Characteristics Transconductance Symbol min. Values typ. 28 1630 710 335 20 max. 2040 890 420 30 ns S pF Unit gfs Ciss Coss Crss td(on) 14 - VDS2*I D*RDS(on)max , ID = 8.6 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 4.5 V, ID = 8.6 A, RG = 1.6 Rise time tr - 120 180 VDD = 15 V, V GS = 4.5 V, ID = 8.6 A, RG = 1.6 Turn-off delay time td(off) - 37 55 ns VDD = 15 V, V GS = 4.5 V, ID = 8.6 A, RG = 1.6 Fall time tf - 72 110 ns VDD = 15 V, V GS = 4.5 V, ID = 8.6 A, RG = 1.6 Data Sheet 3 05.99 BSO 302SN Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Values Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold min. typ. 2 37 60 2.95 max. 3 55 90 - Unit QG(th) Qg(5) Qg V(plateau) - nC VDD = 24 V, ID0,1 A, VGS = 0 to 1 V Gate charge at Vgs=5V VDD = 24 V, ID = 9.8 A , VGS = 0 to 5 V Gate charge total nC V VDD = 15 V, ID = 9.8 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 9.8 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 0.9 70 80 9.8 39.2 1.6 105 120 A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage V ns C VGS = 0 V, I F = 19.6 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 05.99 BSO 302SN Power dissipation Drain current Ptot= f (TA) BSO 302SN ID = f (TA ) BSO 302SN 2.6 W 11 A 2.2 2.0 1.8 9 8 7 6 5 4 3 2 Ptot 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C ID 1 0 0 20 40 60 80 100 120 C 160 160 TA TA Safe operating area Transient thermal impedance ID = f ( V DS ) parameter : D = 0 , TA = 25 C 10 A 2 BSO 302SN S( on ) ZthJA = f(tp ) parameter : D= tp/T 10 2 tp = 2.2s = VD S BSO 302SN RD K/W 10 1 10 s 1 ms 10 0 10 ms Z thJA 100 s 10 1 ID D = 0.50 0.20 10 0 0.10 single pulse 0.05 0.02 0.01 10 -1 DC 10 -2 -1 10 10 0 10 1 V 10 2 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS tp Data Sheet 5 05.99 BSO 302SN Typ. output characteristics Drain-source on-resistance I D = f (VDS) parameter: tp = 80 s BSO 302SN RDS(on) = f (Tj) parameter : I D = 8.6 A, VGS = 4.5 V BSO 302SN 24 A Ptot = 2W jh ig f k le dc 0.040 VGS [V] a 2.5 b c 3.0 20 18 16 0.032 RDS(on) 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 0.028 0.024 d e f ID 14 12 10 8 6 4 2 a 98% 0.020 0.016 0.012 0.008 0.004 0.000 -60 g h bi j k l typ 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 -20 20 60 100 140 C 200 VDS Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 pF Ciss C 10 3 Coss Crss 10 2 0 5 10 15 20 V 30 VDS Data Sheet 6 05.99 BSO 302SN Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on) max 20 A Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS , ID = 80 A 3.0 V 16 14 2.4 VGS(th) 2.2 2.0 1.8 1.6 1.4 ID 12 10 8 6 4 2 1.2 1.0 0.8 0.6 0.4 0.2 max typ min 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 -60 -20 20 60 100 V 160 VGS Tj Forward characteristics of reverse diode I F = f (VSD) parameter: Tj , tp = 80 s 10 2 BSO 302SN A 10 1 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSO 302SN Avalanche Energy EAS = f (Tj) parameter: ID = 9.8 A, VDD = 25 V RGS = 25 260 mJ Typ. gate charge VGS = f (Q Gate) parameter: ID puls = 9.8 A BSO 302SN 16 V 220 200 180 12 VGS EAS 160 140 10 8 120 100 80 60 40 20 0 20 40 60 80 100 120 C 6 0,2 VDS max 0,8 VDS max 4 2 160 0 0 10 20 30 40 50 60 70 Drain-source breakdown voltage Tj nC 85 Q Gate V(BR)DSS = f (Tj) BSO 302SN 37 V 35 V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 C 180 Tj Data Sheet 8 05.99 |
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